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參數(shù)資料
| 型號： | 2SC5194 |
| 廠商： | NEC Corp. |
| 英文描述： | Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管) |
| 中文描述： | 微波低噪聲放大器NPN硅晶體管（微波低噪聲放大器npn型晶體管） |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SC5194 |
2SC5194
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
100
nA
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 1 V, I
C
= 3 mA
Note 1
80
160
Insertion Power Gain (1)
|S
21e
|
2
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
3.0
4.0
dB
Insertion Power Gain (2)
|S
21e
|
2
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
8.5
dB
Noise Figure (1)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
1.7
2.5
dB
Noise Figure (2)
NF
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
1.5
dB
Gain Bandwidth Product (1)
f
T
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
4
5
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
10
GHz
Collector Capacitance
C
re
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
Note 2
0.65
0.8
pF
Notes 1.
Pulse Measurement: PW
≤
350
μ
s, Duty cycle
≤
2 %, Pulsed
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
Classification
Rank
FB
Marking
T88
h
FE
80 to 160
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| 2SC5195-T1 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5195 | Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5194(NE68818) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5194F-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 100MA I(C) | SOT-343R |
| 2SC5194-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5194-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5195 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
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