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參數(shù)資料
| 型號(hào)： | 2SC5206 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SC5206 |
2SC5206
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
Tj
500
V
Collector to emitter voltage
400
V
Emitter to base voltage
7
V
Collector current
5
A
Collector peak current
10
A
Collector power dissipation
1.8
W
Collector power dissipation
1
25
W
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
500
—
—
V
I
C
= 100 μA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
400
—
—
V
I
C
= 10 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 10 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
h
FE
V
CE(sat)
—
—
100
μA
V
CB
= 400 V, I
E
= 0
V
CE
= 350 V, R
BE
= 0
V
CE
= 5 V, I
C
= 2.5 A
V
CE
= 5 V, I
C
= 1 mA
I
C
= 2.5 A, I
B
= 0.5 A
Collector cutoff current
—
—
100
μA
DC current transfer ratio
20
—
—
DC current transfer ratio
18
—
—
Collector to emitter saturation
voltage
—
—
1.0
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.5
V
I
C
= 2.5 A, I
B
= 0.5 A
Turn on time
t
on
—
0.5
—
μsec
I
C
= 5 A, V
= 150 V,
I
B1
= –I
B2
= 1 A
I
C
= 5 A, V
= 150 V,
I
B1
= –I
B2
= 1 A
I
C
= 5 A, V
= 150 V,
I
B1
= –I
B2
= 1 A
Storage time
t
stg
—
2.0
—
μsec
Fall time
t
f
—
0.6
—
μsec
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