參數(shù)資料
型號(hào): 2SC5526
廠商: Rohm CO.,LTD.
英文描述: High-speed Switching Transistor(高速開關(guān)晶體管)
中文描述: 高速開關(guān)晶體管(高速開關(guān)晶體管)
文件頁數(shù): 1/1頁
文件大小: 52K
代理商: 2SC5526
2SC5526
Transistors
High-speed Switching Transistor
(60V, 12A)
2SC5526
!
Features
1) Low saturation voltage.
(Typ. V
CE(sat)
=
0.15V at I
C
/ I
B
=
6A / 0.3A)
2) High switching speed.
(Typ. tf
=
0.1
μ
s at Ic
=
6A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA2007.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
60
5
12
20
2
25
150
55
~ +
150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc
=
25
°
C)
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Single pulse, Pw
=
100ms
*
!
External dimensions
(Units: mm)
ROHM : TO-220FN
(3) Emitter(Source)
(2) Collector(Drain)
0.75
0.8
2.54
(3)
(1)
(3)
(2)
(1)
2.54
(2)
5
8
1
1
1
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
2SC5526
TO-220FN
EF
500
Basic ordering unit (pieces)
!
Electrical characteristics
(Ta = 25
°
C)
Min.
100
Typ.
Max.
Unit
Conditions
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
ton
tstg
tf
5
100
80
200
10
10
0.3
0.5
1.2
320
0.3
1.5
0.3
V
V
V
μ
A
μ
A
V
V
V
MHz
pF
μ
s
μ
s
μ
s
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
100V
V
EB
=
5V
I
C
/I
B
=
6A/0.3A
I
C
/I
B
=
8A/0.4A
I
C
/I
B
=
6A/0.3A
BV
CEO
60
V
BE(sat)
1.5
V
I
C
/I
B
=
8A/0.4A
V
CE
/
I
C
=
2V/2A
V
CB
=
10V , I
E
=
1
A , f
=
30MHz
V
CE
=
10V , I
E
=
0A , f
=
1MHz
I
C
=
6A , R
L
=
5
I
B1
=
I
B2
=
0.3A
V
CC
30V
h
FE
0.1
Parameter
BV
CBO
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Measured using pulse current
*
*
*
*
*
*
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