參數(shù)資料
型號: 2SC5584
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion mesa type(For horizontal deflection output)
中文描述: 20 A, 600 V, NPN, Si, POWER TRANSISTOR
封裝: TOP-3L-A1, 3 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 45K
代理商: 2SC5584
Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
1
For horizontal deflection output
I
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
I
Absolute Maximum Ratings
T
C
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CES
1 500
V
Collector to emitter voltage
1 500
V
V
CEO
V
EBO
I
CP
600
V
Emitter to base voltage
7
V
Peak collector current
30
A
Collector current
I
C
I
B
P
C
20
8
A
Base current
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
150
W
3.5
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
I
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
1 000 V, I
E
=
0
V
CB
=
1 500 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
10 A
I
C
=
10 A, I
B
=
2.5 A
I
C
=
10 A, I
B
=
2.5 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
10 A, Resistance loaded
I
B1
=
2.5 A, I
B2
=
5.0 A
50
μ
A
1
mA
Emitter cutoff current
I
EBO
h
FE
50
μ
A
Forward current transfer ratio
7
14
Collector to emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
3
V
Base to emitter saturation voltage
1.5
V
Transition frequency
3
MHz
Storage time
t
stg
t
f
2.7
μ
s
μ
s
Fall time
0.2
20.0
±
0.5
2.0
±
0.3
3.0
±
0.3
1.0
±
0.2
5.45
±
0.3
10.9
±
0.5
1
2
3
2
±
0
(
(
S
(
(
(
(
(1.5)
2
±
0
5.0
±
0.3
(3.0)
φ
3.3
±
0.2
(1.5)
2.7
±
0.3
0.6
±
0.2
(
(
1: Base
2: Collector
3: Emitter
TOP-3L Package
Internal Connection
B
C
E
Marking Symbol: C5584
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2SC5587 NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
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