參數(shù)資料
型號: 2SC5606-A
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 19, 1608, ULTRA SUPER MINIMOLD PACKAGE-3
文件頁數(shù): 4/9頁
文件大?。?/td> 194K
代理商: 2SC5606-A
Data Sheet PU10781EJ01V0DS
2
2SC5606
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
200
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
200
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 5 mA
60
80
100
RF Characteristics
Gain Bandwidth Product
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
21
GHz
Insertion Power Gain
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
10
12.5
dB
Noise Figure
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
1.2
1.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
0.21
0.3
pF
Maximum Available Power Gain
MAG
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
14
dB
Maximum Stable Power Gain
MSG
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz
15
dB
Notes 1. Pulse measurement: PW
≤ 350
μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
hFE CLASSIFICATION
Rank
FB/YFB
Marking
UA
hFE
60 to 100
(K –
(K2 – 1) )
S21
S12
S21
S12
<R>
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參數(shù)描述
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