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參數(shù)資料
| 型號： | 2SC5616-T3FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 126K |
| 代理商： | 2SC5616-T3FB |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10047EJ02V0DS (2nd edition)
Date Published December 2001 CP(K)
Printed in Japan
NPN SILICON RF TRANSISTOR
2SC5616
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE AMPLIFIER
3-PIN LEAD-LESS MINIMOLD
NEC Compound Semiconductor Devices 2001
The mark
shows major revised points.
FEATURES
Low voltage operation, low phase distortion
Ideal for OSC applications
3-pin lead-less minimold package (1005 PKG)
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5616
50 pcs (Non reel)
8 mm wide embossed taping
2SC5616-T3
10 kpcs/reel
Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9.0
V
Collector to Emitter Voltage
VCEO
6.0
V
Emitter to Base Voltage
VEBO
2.0
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
140
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5616-EB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5617-EB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5617 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5617-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5617-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC562 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC562200VLA | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SC562200VLK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC563200L | 功能描述:TRANS NPN 8VCEO 50MA S-MINI 3P RoHS:否 類別:分離式半導體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC5632G0L | 功能描述:TRANS NPN 8VCEO 50MA SMINI-3 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
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