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參數(shù)資料
| 型號： | 2SC5606-T1-FB-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 19, 1608, ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 194K |
| 代理商： | 2SC5606-T1-FB-A |
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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
Document No. PU10781EJ01V0DS (1st edition)
(Previous No. P14658EJ3V0DS00)
Date Published August 2009 NS
Printed in Japan
1999, 2009
FEATURES
Suitable for high-frequency oscillation
fT = 25 GHz technology adopted
3-pin ultra super minimold (19, 1608 PKG) package
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
2SC5606
2SC5606-A
50 pcs (Non reel)
8 mm wide embossed taping
2SC5606-T1
2SC5606-T1-A
3-pin ultra super minimold
(19, 1608 PKG) (Pb-Free)
3 kpcs/reel
Pin 3 (collector) face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
115
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
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