參數(shù)資料
型號： 2SC5774
元件分類： 功率晶體管
英文描述： 10 A, 140 V, NPN, Si, POWER TRANSISTOR
封裝： TO-3PB, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 34K
代理商： 2SC5774
2SA2062 / 2SC5774
No.6987-1/4
Features
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
Specifications Note*( ) : 2SA2062
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(-)160
V
Collector-to-Emitter Voltage
VCEO
(-)140
V
Emitter-to-Base Voltage
VEBO
(-)6
V
Collector Current
IC
(-)10
A
Collector Current (Pulse)
ICP
(-)20
A
Collector Dissipation
PC
2.5
W
Tc=25
°C110
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)160V, IE=0
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)0.1
mA
DC Current Gain
hFE(1)
VCE=(--)5V, IC=(--)1A
60
160
hFE(2)
VCE=(--)5V, IC=(--)5A
35
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)1A
(10)15
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(280)140
pF
Base-to-Emitter Voltage
VBE
VCE=(--)5V, IC=(--)5A
1.5
V
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)5A, IB=(--)0.5A
(--0.3)0.2
(--)2.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)5mA, IE=0
(--)160
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)50mA, RBE=∞
(--)140
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)5mA, IC=0
(--)6
V
Turn-On Time
ton
See specified test circuit.
(0.45)0.56
s
Storage Time
tstg
See specified test circuit.
(1.75)3.3
s
Fall Time
tf
See specified test circuit.
(0.25)0.4
s
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6987A
D1503 TS IM TA-100929 / 62501 TS IM TA-3317, 3318
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2062 / 2SC5774
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
140V / 10A, AF70W
Output Applications
相關PDF資料
PDF描述
2SA2062 10 A, 140 V, PNP, Si, POWER TRANSISTOR
2SC5787-FB-A S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5787-T3FB-A S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5787-T3-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5787-T3 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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