參數(shù)資料
型號(hào): 2SC5801-FB
元件分類(lèi): 小信號(hào)晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: LEADLESS, MINMOLD PACKAGE-3
文件頁(yè)數(shù): 19/25頁(yè)
文件大?。?/td> 237K
代理商: 2SC5801-FB
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5801
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
The mark
shows major revised points.
NEC Corporation 2001
NEC Compound Semiconductor Devices 2002
Document No. PU10085EJ02V0DS (2nd edition)
Date Published March 2002 CP(K)
Printed in Japan
FEATURES
Low phase distortion, low voltage operation
Ideal for OSC applications
3-pin lead-less minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5801
50 pcs (Non reel)
8 mm wide embossed taping
2SC5801-T3
10 kpcs/reel
Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9.0
V
Collector to Emitter Voltage
VCEO
5.5
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
140
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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