參數(shù)資料
型號(hào): 2SC5826TV2
元件分類: 小信號(hào)晶體管
英文描述: 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ATV, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 933K
代理商: 2SC5826TV2
2/3
www.rohm.com
c
2011 ROHM Co., Ltd. All rights reserved.
2011.03 - Rev.B
Data Sheet
2SC5826
Electrical characteristics (Ta=25
C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Turn-on time
Storage time
Fall time
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE (sat)
hFE
fT
Cob
ton
tstg
tf
1 Non repetitive pulse
2 See Switching charactaristics measurement circuits
IC
=1mA
IC
=100μA
IE
=100μA
VCB
=40V
VEB
=4V
IC
=2A
IB
=0.2A
VCE
=2V
IC
=100mA
VCE
=10V
IE
= 100mA
f
=10MHz
VCB
=10V
IE
=0mA
f
=1MHz
1
2
60
6
120
200
200
20
50
150
30
1.0
500
390
V
μA
mV
MHz
pF
ns
IC
=3A
IB1
=300mA
IB2
= 300mA
VCC 25V
hFE RANK
Q
120
270
R
180
390
Electrical characteristic curves
01.5
1
0.5
0.01
0.1
1
10
VCE
=2V
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter
Propagation Characteristics
COLLECTOR
CURRENT
:
I
C
(A)
Ta
=125°C
Ta
=25°C
Ta
= 40°C
0.001
0.01
0.1
1
10
1
10
100
1000
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
Fig.2 DC Current Gain vs.
Collector Current (
Ι)
Ta
=25°C
VCE
=5V
VCE
=3V
VCE
=2V
0.001
0.01
0.1
1
10
1
10
100
1000
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
Fig.3 DC Current Gain vs.
Collector Current (
ΙΙ)
Ta
=125°C
Ta
=25°C
Ta
= 40°C
VCE
=2V
0.001
10
1
0.1
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
Ta
=25°C
IC / IB
=20 / 1
IC / IB
=10 / 1
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current (
Ι)
0.001
10
1
0.1
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
IC / IB
=10 / 1
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (
ΙΙ)
Ta
=125°C
Ta
=25°C
Ta
= 40°C
COLLECTOR CURRENT : IC (A)
BASE
EMITTER
SATURATION
VOLTAGE
:
V
BE
(sat)
(V)
0.001
10
1
0.1
0.01
0.1
1
10
IC / IB
=10 / 1
Ta
=125°C
Ta
=25°C
Ta
= 40°C
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
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