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      參數(shù)資料
      型號(hào): 2SC5831
      元件分類: 功率晶體管
      英文描述: 2 A, 55 V, NPN, Si, POWER TRANSISTOR
      封裝: TO-126ML, 3 PIN
      文件頁數(shù): 1/4頁
      文件大?。?/td> 32K
      代理商: 2SC5831
      2SC5831
      No.7261-1/4
      Specifications
      Absolute Maximum Ratings at Ta=25
      °C
      Parameter
      Symbol
      Conditions
      Ratings
      Unit
      Collector-to-Base Voltage
      VCBO
      *55
      V
      Collector-to-Emitter Voltage
      VCEO
      *55
      V
      Emitter-to-Base Voltage
      VEBO
      6V
      Collector Current
      IC
      2A
      Collector Current (Pulse)
      ICP
      4A
      Collector Dissipation
      PC
      1.5
      W
      Tc=25
      °C10
      W
      Junction Temperature
      Tj
      150
      °C
      Storage Temperature
      Tstg
      55 to +150
      °C
      *: On-chip zener diode(65
      ±10V)
      Electrical Characteristics at Ta=25
      °C
      Ratings
      Parameter
      Symbol
      Conditions
      min
      typ
      max
      Unit
      Collector Cutoff Current
      ICBO
      VCB=40V, IE=0
      10
      A
      Emitter Cutoff Current
      IEBO
      VEB=5V, IC=0
      2
      mA
      Continued on next page.
      Applications
      Suitable for use in switching of inductive load
      (motor drivers, printer hammer drivers, relay drivers).
      Features
      High DC current gain.
      Wide ASO.
      On-chip zener diode of 65
      ±10V between collector and
      base.
      Uniformity in collector-to-base voltage.
      Large inductive load handling capability.
      SANYO Electric Co.,Ltd. Semiconductor Company
      TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
      Ordering number : ENN7261
      2SC5831
      Package Dimensions
      unit : mm
      2042B
      [2SC5831]
      GI IM
      Any and all SANYO products described or contained herein do not have specifications that can handle
      applications that require extremely high levels of reliability, such as life-support systems, aircraft's
      control systems, or other applications whose failure can be reasonably expected to result in serious
      physical and/or material damage. Consult with your SANYO representative nearest you before using
      any SANYO products described or contained herein in such applications.
      SANYO assumes no responsibility for equipment failures that result from using products at values that
      exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
      parameters) listed in products specifications of any and all SANYO products described or contained
      herein.
      NPN Epitaxial Planar Silicon Transistor
      Driver Applications
      D2502 TS IM TA-100102
      1 : Emitter
      2 : Collector
      3 : Base
      SANYO : TO-126ML
      4.0
      1.0
      8.0
      1.6
      0.8
      0.75
      1.5
      7.5
      3.0
      1.4
      11.0
      15.5
      3.3
      3.0
      0.7
      2.4
      4.8
      1.7
      1
      2
      3
      Preliminary
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