參數(shù)資料
型號: 2SC5856
元件分類: 功率晶體管
英文描述: 14 A, 700 V, NPN, Si, POWER TRANSISTOR
封裝: 2-16E3A, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 196K
代理商: 2SC5856
2SC5856
2006-11-22
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5856
HORIZONTAL DEFLECTION OUTPUT FOR
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage
: VCBO = 1500 V
Low Saturation Voltage
: VCE (sat) = 3 V (max)
High Speed
: tf(2) = 0.1 μs (typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1500
V
CollectorEmitter Voltage
VCEO
700
V
EmitterBase Voltage
VEBO
5
V
DC
IC
14
Collector Current
Pulse
ICP
28
A
Base Current
IB
7
A
Collector Power Dissipation
PC
55
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
相關(guān)PDF資料
PDF描述
2SC5857 21 A, 750 V, NPN, Si, POWER TRANSISTOR
2SC5858 22 A, 750 V, NPN, Si, POWER TRANSISTOR
2SC5868TLR 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5874STPR 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5886 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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