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參數(shù)資料
| 型號(hào)： | 2SC5998YC |
| 廠商： | Renesas Technology Corp. |
| 元件分類： | ADC |
| 英文描述： | Octal LNA/VGA/AAF/ADC and Crosspoint Switch; Package: TQFP w/ 9.5mm exposed pad; No of Pins: 100; Temperature Range: Industrial |
| 中文描述： | npn型硅外延中高頻功率放大器 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | 2SC5998YC |
Rev.1.00, Apr.20.2004, page 1 of 10
2SC5998
Silicon NPN Epitaxial
High Frequency Medium Power Amplifier
REJ03G0169-0100Z
Rev.1.00
Apr.20.2004
Features
High Transition Frequency
f
T
= 11 GHz typ.
High gain and Excellent Efficiency
Maximum Available Gain (MAG) = +22 dB typ. at V
CE
= 3.6 V, I
C
= 100 mA, f = 500 MHz
Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz
High Collector to Emitter Voltage
V
CEO
= 5 V
Ideal for up to 2GHz applications.
e.g FRS(Family Radio Service) Power Amplifier ,
GMRS (General Mobile Radio Service) Driver Amplifier
Outline
1
2
3
1. Collector
2. Base
3. Emitter
MPAK
Note:
Marking is “YC-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note:
Value on PCB ( FR-4 : 25 x 30 x 1.0mm Double side )
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Ratings
13
5
1.5
500
700
note
150
–55 to +150
Unit
V
V
V
mA
mW
°
C
°C
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