| 型號 | 廠商 | 描述 |
| 2sc5912 2 3 |
PANASONIC CORP | Silicon NPN triple diffusion mesa type |
| 2sc5913 2 3 |
PANASONIC CORP | Silicon NPN triple diffusion mesa type |
| 2sc5926 2 |
PANASONIC CORP | Silicon NPN triple diffusion planar type |
| 2sc5930 2 3 4 5 |
Toshiba Corporation | Variable Capacitance Diode for TV Tuner UHF Tuning; Ratings VR (V): 34; Characteristics n: 6.3 min; Characteristics rs (ohm) max: 0.57; Characteristics C (pF) max: C2 = 14.15 to 15.75 C25 = 1.89 to 2.18; Characteristics CVR/CVR: 2/25; Cl: 2.035; Package: UFP |
| 2sc5931 2 3 |
PANASONIC CORP | Silicon NPN triple diffusion mesa type |
| 2sc5932 2 3 |
Sanyo Electric Co.,Ltd. | 2SC5932 |
| 2sc5939 2 3 |
PANASONIC CORP | Silicon NPN epitaxial planar type |
| 2sc5946 2 |
PANASONIC CORP | 2SC5946 |
| 2sc5948 2 3 4 5 |
Toshiba Corporation | Variable Capacitance Diode for TV Tuner UHF Tuning; Ratings VR (V): 15; Characteristics n: 6.0 min; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1 = 13.0 to 16.0 C10 = 2.0 to 2.3; Characteristics CVR/CVR: 1/10; Cl: 2.15; Package: URP |
| 2sc5949 2 3 4 |
Toshiba Corporation | Transistor Silicon NPN Triple Diffused Type |
| 2sc5975 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Renesas Technology Corp. | SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR |
| 2sc5976 2 3 4 5 |
Toshiba Corporation | Transistor Silicon NPN Epitaxial Type |
| 2sc5980 2 3 4 |
Sanyo Electric Co.,Ltd. | NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2sc5993 2 3 |
PANASONIC CORP | For power amplification For TV VM circuit |
| 2sc5994 2 3 4 |
Sanyo Electric Co.,Ltd. | NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2sc5998yc 2 3 4 5 6 7 8 9 10 11 |
Renesas Technology Corp. | Octal LNA/VGA/AAF/ADC and Crosspoint Switch; Package: TQFP w/ 9.5mm exposed pad; No of Pins: 100; Temperature Range: Industrial |
| 2sc5999 2 3 4 |
Sanyo Electric Co.,Ltd. | NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications |
| 2sc6010 2 3 4 5 |
Toshiba Corporation | Silicon NPN Triple Diffused Type |
| 2sc6011 2 3 4 5 6 7 |
Allegro MicroSystems, Inc. | Audio Amplification Transistor |
| 2sc6011a 2 3 4 5 6 7 |
Allegro MicroSystems, Inc. | Audio Amplification Transistor |
| 2sc6012 2 3 |
PANASONIC CORP | Silicon NPN triple diffusion mesa type |
| 2sc6023 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
Sanyo Electric Co.,Ltd. | NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications |
| 2sc6026 2 3 |
Toshiba Corporation | Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications |
| 2sc6033 2 3 4 5 |
Toshiba Corporation | TOSHIBA Transistor Silicon NPN Epitaxial Type |
| 2sc6034 2 3 4 5 |
Toshiba Corporation | Silicon NPN Triple Diffused Type |
| 2sc6036 2 3 |
PANASONIC CORP | Silicon NPN epitaxial planar type |
| 2sc6040 2 3 4 5 |
Toshiba Corporation | High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications |
| 2sc6042 2 3 4 5 |
Toshiba Corporation | Silicon NPN Triple Diffused Type |
| 2sc605 |
Electronic Theatre Controls, Inc. | NPN SILICON TRANSISTOR |
| 2sc606 |
Electronic Theatre Controls, Inc. | NPN SILICON TRANSISTOR |
| 2sc6061 2 3 4 5 |
Toshiba Corporation | Silicon NPN Epitaxial Type |
| 2sc6075 2 3 4 5 |
Toshiba Corporation | Silicon NPN Epitaxial Type |
| 2sc6076 2 3 4 5 |
Toshiba Corporation | Silicon NPN Epitaxial Type (PCT Process) |
| 2sc6077 2 3 4 5 |
Toshiba Corporation | Silicon NPN Epitaxial Type (PCT Process) |
| 2sc6078 2 3 4 5 |
Toshiba Corporation | Silicon NPN Epitaxial Type (PCT Process) |
| 2sc6079 2 3 4 5 |
Toshiba Corporation | Silicon NPN Epitaxial Type |
| 2sc6087 2 3 4 5 |
Toshiba Corporation | Silicon NPN Epitaxial Type |
| 2sc668sp |
Sanyo Electric Co.,Ltd. | 2SC668SP |
| 2sc717 |
Electronic Theatre Controls, Inc. | VHF RF AMPLIFIER, MIXER, OSCILLATOR |
| 2sc730 2 3 |
Mitsubishi Electric Corporation | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
| 2sc732tm 2 3 |
Toshiba Corporation | NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
| 2sc741 2 3 |
Mitsubishi Electric Corporation | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
| 2sc752 2 |
Toshiba Corporation | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
| 2sc752gtm 2 |
Toshiba Corporation | Ultra High Speed Switching Applications Computer, Counter Applications |
| 2sc752tm 2 |
Toshiba Corporation | Ultra High Speed Switching Applications Computer, Counter Applications |
| 2sc756a 2 3 4 5 |
Electronic Theatre Controls, Inc. | CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA FEMALE; 50 OHM, RG58C/U COAX; 18" CABLE LENGTH |
| 2sc781 |
Electronic Theatre Controls, Inc. | NPN SILICON EPITAXIAL TRANSISTOR |
| 2sc790 |
Toshiba Corporation | 2SC790 |
| 2sc799 |
Electronic Theatre Controls, Inc. | NPN SILICON EPITAXIAL TRANSISTOR |
| 2sc815 2 |
Electronic Theatre Controls, Inc. | LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |