參數(shù)資料
型號(hào): 2SC6015
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 小信號(hào)晶體管
英文描述: 9000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PCP, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 32K
代理商: 2SC6015
2SC6015
No.8558-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=2V, IC=500mA
280
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
50
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=3A, IB=60mA
90
135
mV
IC=4.5A, IB=90mA
135
205
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=3A, IB=60mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10A, IE=0A
15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
15
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10A, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
180
ns
Fall Time
tf
See specified Test Circuit.
25
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7008-003
VR
RB
VCC=5V
IC=20IB1= --20IB2=3A
VBE= --5V
+
50
INPUT
OUTPUT
RL
470
F
100
F
PW=20
s
IB1
D.C.
≤1%
IB2
2.5
4.0
1.0
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
Top View
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IC -- VCE
Collector
Current,
I
C
--
A
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
Collector
Current,
I
C
--
A
Base-to-Emitter Voltage, VBE -- V
9
7
3
5
2
1
8
4
6
0
5
4
2
3
1
0
0.2
0
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT09760
10mA
15mA
20mA
30mA
50mA
60mA
80mA
100mA
IB=0mA
5mA
T
a=75
°C
25
°C
--25
°C
VCE=2V
0
0.2
0.4
0.6
0.8
1.0
1.1
0.1
0.3
0.5
0.7
0.9
IT09761
40mA
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