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參數(shù)資料
| 型號： | 2SC6022 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 9000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SC6022 |
2SC6022
No.8355-1/4
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET and MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE range.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
40
V
Collector-to-Emitter Voltage
VCEO
30
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
9A
Collector Current (Pulse)
ICP
12
A
Base Current
IB
1.2
A
Collector Dissipation
PC
1W
Tc=25
°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=30V, IE=0A
0.1
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
0.1
A
DC Current Gain
hFE
VCE=2V, IC=500mA
250
400
Gain-Bandwidth Product
fT
VCE=10V, IC=500mA
320
MHz
Continued on next page.
Ordering number : ENN8355
62005EA MS IM TB-00001412
2SC6022
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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PDF描述 |
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| 2SC6025 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC6026-Y | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC6033 | 2500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC6036G | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC6040 | 1000 mA, 410 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6022-TL-E | 制造商:ON Semiconductor 功能描述: |
| 2SC6023 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications |
| 2SC6023-TR-E | 功能描述:TRANS NPN 3.5V 35MA MCP4 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC6024 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:UHF to C Band Low-Noise Amplifier and OSC Applications |
| 2SC6024-TL-E | 功能描述:TRANS NPN 3.5V 35MA 3SSFP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
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