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參數(shù)資料
| 型號： | 2SC6026-GR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | FSM, 2-1E1A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 137K |
| 代理商： | 2SC6026-GR |
2SC6026
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026
General-Purpose Amplifier Applications
High voltage and high current
: VCEO = 50 V, IC = 100 mA (max)
Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE
: hFE = 120~400
Complementary to 2SA2154
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
30
mA
Collector power dissipation
PC
50
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
0.1
μA
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE (Note)
VCE = 6 V, IC = 2 mA
120
400
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
60
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
0.95
pF
Note: hFE classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
fSM
1.BASE
2.EMITTER
3.COLLECTOR
0.
2±
0.
05
0.1±0.05
3
0.8±0.05
1.0±0.05
0.1
5±0.0
5
0.
35
±0
.05
0.
6±0.0
5
1
2
0.1±0.05
0.4
8
+0
.0
2
-0.
04
Type Name
hFE Rank
7F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6026-GR(TPL3) | 功能描述:兩極晶體管 - BJT 100mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6026MFV | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 2SC6026MFV-GR | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6026MFV-GR(L3,T | 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SC6026MFV-GR(TPL3 | 功能描述:兩極晶體管 - BJT 150mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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