- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371521 > 2SD0602 (PANASONIC CORP) Silicon NPN epitaxial planer type PDF資料下載
參數(shù)資料
| 型號： | 2SD0602 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type |
| 中文描述： | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SD0602 |
Transistors
2SD0602A
Silicon NPN epitaxial planer type
1
For general amplification
Complementary to 2SB0710A
I
Features
Low collector to emitter saturation voltage V
CE(sat)
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
V
EBO
I
CP
50
V
Emitter to base voltage
5
V
Peak collector current
1
A
Collector current
I
C
P
C
T
j
500
mA
Collector power dissipation
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol: X
Note)*1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
h
FE1
85 to 170
120 to 240
170 to 340
85 to 340
Marking symbol
XQ
XR
XS
X
Unit: mm
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
0.16
+0.10
0
±
5
°
10
°
0
1
+
–
1
+
–
1: Base
2: Emitter
3: Collector
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
Product of no-rank is not classified and have no indication for rank.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CBO
V
CB
=
20 V, I
E
=
0
I
C
=
10
μ
A, I
E
=
0
I
C
=
10 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.1
μ
A
Collector to base voltage
60
V
Collector to emitter voltage
V
CEO
V
EBO
h
FE1
*2
50
V
Emitter to base voltage
Forward current transfer ratio
*1
5
V
85
340
h
FE2
V
CE(sat)
f
T
40
Collector to emitter saturation voltage
*1
0.35
0.6
V
Transition frequency
200
MHz
Collector output capacitance
C
ob
6
15
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD0602A | Silicon NPN epitaxial planer type |
| 2SD0638 | For Medium-Power General Amplification |
| 2SD0662 | For High Breakdown Voltage General Amplification |
| 2SD0662B | For High Breakdown Voltage General Amplification |
| 2SD0814A | For High Breakdown Voltage Low-Frequency And Low-Noise |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD0602/2SD0602A(2SD602/2SD602A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD0602. 2SD0602A (2SD602. 2SD602A) - NPN Transistor |
| 2SD0602A | 制造商:HTSEMI 制造商全稱:Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:TRANSISTOR (NPN) |
| 2SD0602A(2SD602A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號トランジスタ － 汎用低周波増幅 |
| 2SD0602A_13 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。