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參數(shù)資料
| 型號： | 2SD0958 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For Low-Frequency And Low-Noise Amplification |
| 中文描述： | 20 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2SD0958 |
Transistors
2SD0958
(2SD958)
Silicon NPN epitaxial planar type
1
Publication date: November 2002
SJC00199BED
For low-frequency and low-noise amplification
Complementary to 2SB0788 (2SB788)
■
Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
120
V
Collector-emitter voltage (Base open)
V
CEO
120
V
Emitter-base voltage (Collector open)
V
EBO
I
C
7
V
Collector current
20
mA
Peak collector current
I
CP
50
mA
Collector power dissipation
P
C
T
j
T
stg
400
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
CE
= 5 V, I
C
= 2 mA
I
C
=
20 mA, I
B
=
2 mA
V
CB
=
5 V, I
E
=
2 mA, f
=
200 MHz
V
CE
= 40 V, I
C
= 1 mA, G
V
= 80 dB
R
g
= 100 k
, Function = FLAT
120
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
120
V
Emitter-base voltage (Collector open)
7
V
Collector-base cut-off current (Emitter open)
I
CBO
100
nA
Collector-emitter cutoff current (Base open)
I
CEO
h
FE
1
μ
A
Forward current transfer ratio
*
180
700
Collector-emitter saturation voltage
V
CE(sat)
0.6
V
Transition frequency
f
T
NV
200
MHz
Noise voltage
150
mV
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
6.9
±
0.1
2.5
±
0.1
(1.0)
(
(1.5)
(0.85)
0.55
±
0.1
0.45
±
0.05
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(
3
±
0
4
±
0
4
±
0
2
±
0
1
±
0
2
±
0
1
±
0
(1.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Rank
R
S
T
h
FE
180 to 360
260 to 520
360 to 700
Note) The part number in the parenthesis shows conventional part number.
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PDF描述 |
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| 2SD0965 | Silicon NPN epitaxial planar type |
| 2SD0966 | For Low-Frequency Amplification |
| 2SD966 | For Low-Frequency Amplification |
| 2SD0968A | For Low-Frequency Driver Amplification |
| 2SD0973A | For Low-Frequency Driver Amplification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD0958(2SD958) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號トランジスタ － 汎用低周波増幅 |
| 2SD0958R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20MA I(C) | SC-71 |
| 2SD0958S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20MA I(C) | SC-71 |
| 2SD0958T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20MA I(C) | SC-71 |
| 2SD0965 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
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