參數(shù)資料
型號: 2SD1254
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN epitaxial planar type(For power switching)
中文描述: 3 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: N-G1, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 58K
代理商: 2SD1254
2
Power Transistors
2SC4960, 2SC4960A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.0W)
(1)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
T
C
=25C
90mA
60mA
50mA
40mA
30mA
20mA
10mA
100mA
I
B
=200mA
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.03
0.1
0.3
1
0.01
3
1
0.3
0.1
0.03
I
C
/I
B
=5
–25C
25C
T
C
=100C
Collector current I
C
(A)
C
C
0.01
0.03
0.1
0.3
1
0.01
3
1
0.3
0.1
0.03
I
C
/I
B
=5
T
C
=–25C
25C
100C
Collector current I
C
(A)
B
B
0.01
3
1
0.1
0.03
Collector current I
C
(A)
0.3
0.1
0.3
1
3
10
30
100
V
CE
=5V
T
C
=100C
25C
–25C
F
F
0.001
0.01
0.1
1
0.003
Collector current I
C
(A)
0.03
0.3
0.1
0.3
1
3
10
30
100
300
1000
V
=10V
f=1MHz
T
C
=25C
T
T
0
1.0
0.8
0.2
0.6
0.4
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=5
(2I
B1
=–I
B2
)
V
CC
=250V
T
C
=25C
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
10
1
0.1
0.03
0.3
3
I
CP
I
C
Non repetitive pulse
T
C
=25C
2SC4960
2SC4960A
DC
10ms
t=1ms
Collector to emitter voltage V
CE
(V)
C
C
相關(guān)PDF資料
PDF描述
2SC4960A Silicon NPN triple diffusion planar type(For power switching)
2SC4968 Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
2SC4978 Switching Power Transistor(3A NPN)
2SC4979 Switching Power Transistor(5A NPN)
2SC4980 Switching Power Transistor(5A NPN)
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