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參數(shù)資料
| 型號： | 2SD1264A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power amplification) |
| 中文描述： | 2 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SD1264A |
2
Power Transistors
2SB940, 2SB940A
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
Area of safe operation (ASO)
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
–12
–10
–8
–2
–6
–4
0
–600
–500
–400
–300
–200
–100
T
C
=25C
–4.0mA
–3.5mA
–3.0mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
– 0.5mA
I
B
=–4.5mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
–1.0
– 0.8
– 0.2
– 0.6
– 0.4
0
–2.0
–1.6
–1.2
– 0.8
– 0.4
T
C
=100C
–25C
25C
V
CE
=–10V
C
C
– 0.01
–3
–1
– 0.1
– 0.03
Collector current I
C
(A)
– 0.3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
I
C
/I
B
=10
T
C
=100C
25C
–25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
CE
=–10V
T
C
=100C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
=–10V
f=10MHz
T
C
=25C
T
T
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
t=0.5ms
5ms
1ms
I
CP
I
C
2
2
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
10
–2
10
–1
1
10
10
3
10
2
(1)
(2)
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
Time t (s)
T
t
(
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB940A | For Power Amplification |
| 2SB941 | Silicon PNP epitaxial planar type(For low-frequency power amplification) |
| 2SB0941 | Silicon PNP epitaxial planar type(For low-frequency power amplification) |
| 2SB941A | Silicon PNP epitaxial planar type(For low-frequency power amplification) |
| 2SD1266A | Silicon PNP epitaxial planar type(For low-frequency power amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1264AP | 功能描述:TRANS NPN LF 180VCEO 2A TO-220F RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1264A-P | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type |
| 2SD1264APLS | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1264AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 2A I(C) | SOT-186 |
| 2SD1264P | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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