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參數資料
| 型號： | 2SD1266PQ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | SC-67, TO-220F-A1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 58K |
| 代理商： | 2SD1266PQ |
1
Power Transistors
Publication date: May 2002
SJD00283AED
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB0941 (2SB941) and 2SB941A (2SB941A)
s Features
High forward current transfer ratio h
FE which has satisfactory
linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one
screw
s Absolute Maximum Ratings T
a = 25°C
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Unit: mm
s Electrical Characteristics T
a = 25°C
Parameter
Symbol
Rating
Unit
Collector to base
2SD1266
VCBO
60
V
voltage
2SD1266A
80
Collector to
2SD1266
VCEO
60
V
emitter voltage
2SD1266A
80
Emitter to base voltage
VEBO
6V
Peak collector current
ICP
5A
Collector current
IC
3A
Collector power
TC = 25°CPC
35
W
dissipation
Ta = 25°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff
2SD1266
ICES
VCE = 60 V, VBE = 0
200
A
current
2SD1266A
VCE = 80 V, VBE = 0
200
Collector cutoff
2SD1266
ICEO
VCE = 30 V, IB = 0
300
A
current
2SD1266A
VCE = 60 V, IB = 0
300
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
1
mA
Collector to emitter
2SD1266
VCEO
IC = 30 mA, IB = 0
60
V
voltage
2SD1266A
80
Forward current transfer ratio
hFE1*
VCE = 4 V, IC = 1 A
70
250
hFE2
VCE = 4 V, IC = 3 A
10
Base to emitter voltage
VBE
VCE = 4 V, IC = 3 A
1.8
V
Collector to emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 0.375 A
1.2
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 1 A, IB1 = 0.1 A, IB2 = 0.1 A,
0.5
s
Storage time
tstg
VCC = 50 V
2.5
s
Fall time
tf
0.4
s
*h
FE1 Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Note:
Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in
the rank classification.
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.3
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ 3.1±0.1
Note) The part number in the parenthesis shows conventional part number.
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| 2SD1267AQ | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1266Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1266R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SD1267 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SD1267/2SD1267A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD1267. 2SD1267A - NPN Transistor |
| 2SD12670P | 功能描述:TRANS NPN 60VCEO 4A TO-220F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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