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參數(shù)資料
| 型號(hào)： | 2SD1306NDTL-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-59A, MPAK-3 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 71K |
| 代理商： | 2SD1306NDTL-E |
2SJ319(L), 2SJ319(S)
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–200
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–3
A
Drain peak current
I
D(pulse)*
1
–12
A
Body to drain diode reverse drain current
I
DR
–3
A
Channel dissipation
Pch*
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at T
C = 25°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–200
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–100
AV
DS = –160 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–2.0
—
–4.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
resistance
R
DS(on)
—
1.7
2.3
I
D = –2 A, VGS = –10 V*
1
Forward transfer admittance
|y
fs|
1.0
1.7
—
S
I
D = –2 A, VDS = –10 V*
1
Input capacitance
Ciss
—
330
—
pF
V
DS = –10 V, VGS = 0,
Output capacitance
Coss
—
130
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
25
—
pF
Turn-on delay time
t
d(on)
—
10
—
ns
I
D = –2 A, VGS = –10 V,
Rise time
t
r
—
30
—
ns
R
L = 15
Turn-off delay time
t
d(off)
—40
—
ns
Fall time
t
f
—30
—
ns
Body to drain diode forward
voltage
V
DF
—
–1.15
—
V
I
F = –3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
180
—
ns
I
F = –3 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
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