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參數(shù)資料
| 型號(hào)： | 2SD1616A |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 111K |
| 代理商： | 2SD1616A |
2SD1616A
NPN
SILICON
TRANSISTOR
DESCRIPTION
2SD1616A
transistor designed for use in driver and
output stages of AF amplifier, general
purpose application.
is
NPN
silicon
planar
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Power Dissipation @ Ta=25
o
C
Operating & Storage Junction Temperature
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
j
,T
stg
60V
120V
6V
1A
0.65W
-55 to +150
o
C
ELECTRICAL CHARACTERISTICS (Ta=25
o
C)
PARAMETER
SYMBOL
I
CBO
I
EBO
H
FE *
H
FE *
V
BE *
V
CE(sat) *
V
BE(sat) *
C
ob
f
T
t
on
t
stg
t
f
MIN
MAX
100
100
350
UNIT
nA
nA
CONDITIONS
V
CB
=60V
V
EB
=6V
V
CE
=2V
V
CE
=2V
V
CE
=2V
I
C
=1A
I
C
=1A
V
CB
=10V
MHz V
CE
=2V
μ
s
Vcc=10V
μ
s
I
B1
=-I
B2
=10mA
μ
s
V
BE(off)
=-2 to 3V
Collector Cutoff Current
Emitter Cutoff Current
D.C. Current Gain
D.C. Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Gain Bandwidth Product
Turn-On Time
Storage Time
Fall Time
* Pulse test PW
≦
350
μ
s, duty cycle
≦
2%.
I
E
=0
I
C
=0
I
C
=100mA
I
C
=1A
I
C
=50mA
I
B
=50mA
I
B
=50mA
I
E
=0
I
C
=100mA
I
C
=100mA
170
45
600
700
0.5
1.2
TYP.
mV
V
V
pF
19
100
0.07
0.95
0.07
TYP.
TYP.
TYP.
MICRO
E
12.7
(0.5)
min.
4.6
(0.18)
10
2.54
(0.1)
0.51
(0.02)
Bottom view
0.45
(0.018)
Unit: mm(inch)
TO-92B
0.4
(0.016)
4.68
(0.18)
3.58
(0.14)
E
B C
G/F, 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong.
Kwun Tong P.O. BOX 69477, Hong Kong. TEL: (852) 23430181 FAX: (852) 23410321
HOMEPAGE: http://www.microelectr.com.hk E-MAIL ADDRESS: common@microelectr.com.hk
MICRO ELECTRONICS LTD.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1631 | NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS) |
| 2SD1632 | Horizontal Deflection Output |
| 2SD1633 | Silicon NPN triple diffusion planar type darlington |
| 2SD1634 | Silicon PNP Triple-Diffused Planar Darlington Type |
| 2SD1640 | Silicon NPN epitaxial planar darlington type AF output amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1616A-AZ-K | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SD1616A-AZ-L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1616A-T-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1616-K (AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1616-L | 制造商:Renesas Electronics Corporation 功能描述: |
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