- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371526 > 2SD1705 (PANASONIC CORP) Silicon NPN epitaxial planar type PDF資料下載
參數(shù)資料
| 型號： | 2SD1705 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type |
| 中文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SC-92, TOP-3F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 92K |
| 代理商： | 2SD1705 |
Power Transistors
2SD1705
Silicon NPN epitaxial planar type
1
Publication date: September 2003
SJD00210BED
For power switching
Complementary to 2SB1154
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with one
screw
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
15.0
±
0.3
11.0
±
0.2
5.0
±
0.2
2.0
±
0.2
2.0
±
0.1
0.6
±
0.2
1.1
±
0.1
5.45
±
0.3
10.9
±
0.5
1
2
3
2
±
0
1
±
0
S
(
1
±
0
(
φ
3.2
±
0.1
(3.2)
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
130
V
Collector-emitter voltage (Base open)
80
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
I
CP
10
A
Peak collector current
20
A
Collector power dissipation
P
C
70
W
T
a
=
25
°
C
3.0
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
CBO
I
C
=
10 mA, I
B
=
0
V
CB
=
100 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
3 A
V
CE
=
2 V, I
C
=
6 A
I
C
=
6 A, I
B
=
0.3 A
I
C
=
10 A, I
B
=
1 A
I
C
=
6 A, I
B
=
0.3 A
I
C
=
10 A, I
B
=
1 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
80
V
Collector-base cutoff current (Emitter open)
10
μ
A
μ
A
Emitter-base cutoff current (Collector open)
I
EBO
50
Forward current transfer ratio
h
FE1
h
FE2
*
45
90
260
h
FE3
30
Collector-emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
0.5
V
1.5
Base-emitter saturation voltage
V
BE(sat)1
1.5
V
V
BE(sat)2
f
T
2.5
Transition frequency
20
MHz
Turn-on time
t
on
I
C
=
6 A, I
B1
=
0.6 A, I
B2
=
0.6 A
V
CC
=
50 V
0.5
μ
s
μ
s
μ
s
Storage time
t
stg
t
f
2.0
Fall time
0.2
Rank
Q
P
h
FE2
90 to 180
130 to 260
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1706 | SILICON NPN EPITAXIAL PLANAR TYPE POWER SWITCHING |
| 2SB1155 | SILICON NPN EPITAXIAL PLANAR TYPE POWER SWITCHING |
| 2SD1707 | Silicon NPN epitaxial planar type |
| 2SD1719 | Silicon NPN triple diffusion planar type |
| 2SD1726 | TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD17050P | 功能描述:TRANS NPN 80VCEO 10A TOP-3F RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD17070P | 功能描述:TRANS NPN 80VCEO 20A TOP-3F RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1717 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS. TRANS. TOP-3L 160V 12A 120W BCE |
| 2SD1718 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS. TRANS. TOP-3L 170V 15A 150W BCE |
| 2SD1724 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126LP 120V 3A 20W ECB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。