- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371526 > 2SD1747 (PANASONIC CORP) Silicon NPN epitaxial planar type PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD1747 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type |
| 中文描述： | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, I-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | 2SD1747 |
1
Power Transistors
2SD1747, 2SD1747A
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1177
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Large collector current I
C
G
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
130
150
80
100
7
15
7
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1747
2SD1747A
2SD1747
2SD1747A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 3A
I
C
= 5A, I
B
= 0.25A
I
C
= 5A, I
B
= 0.25A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 3A, I
B1
= 0.3A, I
B2
= – 0.3A,
V
CC
= 50V
min
80
100
45
90
typ
30
0.5
1.5
0.1
max
10
50
260
0.5
1.5
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
2SD1747
2SD1747A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7
±
0
7.0
±
0.3
3.0
±
0.2
3.5
±
0.2
1
+
–
0
±
0
1
±
0
4.6
±
0.4
2
1
3
1.1
±
0.1
0.75
±
0.1
2.3
±
0.2
0.85
±
0.1
0.4
±
0.1
7.0
±
0.3
0.75
±
0.1
2.3
±
0.2
4.6
±
0.4
1.1
±
0.1
1
±
0
7
±
0
2.0
±
0.2
0.9
±
0.1
0 to 0.15
3.5
±
0.2
2
±
0
1
1
2
±
0
3.0
±
0.2
1
1
2
3
0 to 0.15
2.5
0.5 max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1747A | Silicon NPN epitaxial planar type |
| 2SD1748 | Silicon NPN triple diffusion planar type Darlington |
| 2SD1748A | Silicon NPN triple diffusion planar type Darlington |
| 2SD1749 | Silicon NPN triple diffusion planar type Darlington(For low-freauency power amplification) |
| 2SD1749A | Silicon NPN triple diffusion planar type Darlington(For low-freauency power amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1748 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. I-TYPE 60V 2A 15W BCE SURFACE MOUNT |
| 2SD175 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 5A 50W BEC |
| 2SD1755 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1757 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1757K | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。