參數(shù)資料
型號(hào): 2SD1749
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type Darlington(For low-freauency power amplification)
中文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, I-G1, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 65K
代理商: 2SD1749
1
Power Transistors
2SD1749, 2SD1749A
Silicon NPN triple diffusion planar type Darlington
For low-freauency power amplification
Complementary to 2SB1179 and 2SB1179A
I
Features
G
High foward current transfer ratio h
FE
G
High-speed switching
G
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
5
8
4
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1749
2SD1749A
2SD1749
2SD1749A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= –12mA,
V
CC
= 50V
min
60
80
1000
2000
typ
20
0.5
4
1
max
200
200
500
500
2
10000
2.5
2
4
Unit
μ
A
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SD1749
2SD1749A
2SD1749
2SD1749A
2SD1749
2SD1749A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
2000 to 5000
4000 to 10000
Internal Connection
B
E
C
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7
±
0
7.0
±
0.3
3.0
±
0.2
3.5
±
0.2
1
+
0
±
0
1
±
0
4.6
±
0.4
2
1
3
1.1
±
0.1
0.75
±
0.1
2.3
±
0.2
0.85
±
0.1
0.4
±
0.1
7.0
±
0.3
0.75
±
0.1
2.3
±
0.2
4.6
±
0.4
1.1
±
0.1
1
±
0
7
±
0
2.0
±
0.2
0.9
±
0.1
0 to 0.15
3.5
±
0.2
2
±
0
1
1
2
±
0
3.0
±
0.2
1
1
2
3
0 to 0.15
2.5
0.5 max.
相關(guān)PDF資料
PDF描述
2SD1749A Silicon NPN triple diffusion planar type Darlington(For low-freauency power amplification)
2SD1750 Silicon NPN triple diffusion planar type Darlington
2SD1750A Silicon NPN triple diffusion planar type Darlington
2SD1751 Silicon NPN triple diffusion planar type(For power amplification)
2SD1752 Silicon NPN epitaxial planar type
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD175 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 5A 50W BEC
2SD1755 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD1757 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD1757K 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD1757KT146 制造商:ROHM Semiconductor 功能描述: