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參數(shù)資料
| 型號(hào)： | 2SD1749 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type Darlington(For low-freauency power amplification) |
| 中文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, I-G1, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2SD1749 |
2
Power Transistors
2SD1749, 2SD1749A
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
Area of safe operation (ASO)
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
=Ta
(2) Without heat sink
(P
C
=1.3W)
(1)
(2)
Ambient temperature Ta (C)
C
C
0
10
8
2
6
4
0
10
8
6
4
2
I
B
=4.0mA
T
C
=25C
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
3.2
0.8
2.4
1.6
0
10
8
6
4
2
V
CE
=3V
T
C
=100C
–25C
25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=250
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
10
10
2
10
3
10
4
10
5
V
CE
=3V
25C
–25C
T
C
=100C
F
F
0.1
Collector to base voltage V
CB
(V)
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
=0
f=1MHz
T
C
=25C
C
o
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=10ms
300ms
1ms
2
2
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
10
–1
1
10
10
2
10
3
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
(1)
(2)
Time t (s)
T
t
(
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| 2SD1751 | Silicon NPN triple diffusion planar type(For power amplification) |
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