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參數(shù)資料
| 型號(hào)： | 2SD1800 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistor for Driver Application(驅(qū)動(dòng)器應(yīng)用的NPN硅外延平面型達(dá)林頓晶體管) |
| 中文描述： | 瑞展硅晶體管（驅(qū)動(dòng)器應(yīng)用的npn型硅外延平面型達(dá)林頓晶體管的驅(qū)動(dòng)應(yīng)用） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | 2SD1800 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Driver Applications
Ordering number:EN2111B
2SD1800
21599TH (KT)/8309MO/D156TA, TS No.2111–1/4
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0~0.2
2.3
0.6
12
4
3
Package Dimensions
unit:mm
2045B
[2SD1800]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SD1800]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Applications
Relay drivers, hammer drivers, lamp drivers, motor
drivers.
Features
High DC current gain (hFE≥4000).
Large current capacity.
Small and slim package making it easy to make
2SD1800-applied sets smaller.
2.3
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
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PDF描述 |
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| 2SD1947A | 10 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD1953 | NPN Epitaxial Planar Silicon Transistors for 120V/1.5A Driver Applications(120V/1.5A驅(qū)動(dòng)器應(yīng)用的NPN硅外延平面型晶體管) |
| 2SD2165M | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2165L | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2165K | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1801S-E | 功能描述:兩極晶體管 - BJT BIP NPN 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1801S-TL-E | 功能描述:兩極晶體管 - BJT BIP NPN 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1801T-E | 功能描述:兩極晶體管 - BJT BIP NPN 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1801T-TL-E | 功能描述:兩極晶體管 - BJT BIP NPN 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1802S-E | 功能描述:兩極晶體管 - BJT BIP NPN 3A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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