參數(shù)資料
型號(hào): 2SD1950VK
元件分類(lèi): 功率晶體管
英文描述: 2 A, 25 V, NPN, Si, POWER TRANSISTOR
封裝: POWER, MINIMOLD PACKAGE-3
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 1616K
代理商: 2SD1950VK
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SILICON TRANSISTOR
2SD1950
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. D17976EJ3V0DS00 (3rd edition)
(Previous No. TC-1894A)
Date Published March 2006 NS CP(K)
Printed in Japan
c
1987
相關(guān)PDF資料
PDF描述
2SD1964Q 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD1975S 15 A, 180 V, NPN, Si, POWER TRANSISTOR
2SD1975AS 15 A, 200 V, NPN, Si, POWER TRANSISTOR
2SD1975AQ 15 A, 200 V, NPN, Si, POWER TRANSISTOR
2SD1976 6 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD1955 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-64(TP)110V 3A 20W BCE
2SD1957 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FP 120V 7A 30W BCE
2SD1958 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO220ML200V 1.5A 30W
2SD1963T100R 功能描述:兩極晶體管 - BJT NPN 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD1963T100S 功能描述:兩極晶體管 - BJT NPN 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2