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參數(shù)資料
| 型號： | 2SD1950VK |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 25 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | POWER, MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 1616K |
| 代理商： | 2SD1950VK |
Data Sheet D14654EJ3V0DS
2
2SJ606
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
m 20 V, VDS = 0 V
m 10
A
Gate Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS =
10 V, ID = 42 A
38
74
S
Drain to Source On-state Resistance
RDS(on)1
VGS =
10 V, ID = 42 A
12
15
m
RDS(on)2
VGS =
4.0 V, ID = 42 A
16
23
m
Input Capacitance
Ciss
VDS =
10 V
4800
pF
Output Capacitance
Coss
VGS = 0 V
1200
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
340
pF
Turn-on Delay Time
td(on)
VDD =
30 V, ID = 42 A
13
ns
Rise Time
tr
VGS =
10 V
13
ns
Turn-off Delay Time
td(off)
RG = 0
290
ns
Fall Time
tf
160
ns
Total Gate Charge
QG
VDD=
48 V
120
nC
Gate to Source Charge
QGS
VGS =
10 V
20
nC
Gate to Drain Charge
QGD
ID =
83 A
30
nC
Body Diode Forward Voltage
VF(S-D)
IF = 83 A, VGS = 0 V
1.1
V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V
60
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
120
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS =
20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS (
)
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS (
)
10%
90%
10%
0
VDS (
)
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
VGS
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| 2SD1955 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-64(TP)110V 3A 20W BCE |
| 2SD1957 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FP 120V 7A 30W BCE |
| 2SD1958 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO220ML200V 1.5A 30W |
| 2SD1963T100R | 功能描述:兩極晶體管 - BJT NPN 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1963T100S | 功能描述:兩極晶體管 - BJT NPN 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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