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參數資料
| 型號： | 2SD1976 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 2SD1976 |
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相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1979GT | 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1979GS | 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1981 | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 2SD1996T | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1999 | 4 A, 20 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1979 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD19790SL | 功能描述:TRANS NPN 20VCEO 300MA SMINI-3P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1979GSL | 功能描述:TRANS NPN 20VCEO 300MA SMINI-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1980TL | 功能描述:達林頓晶體管 D-PAK;BCE NPN;DARL SMT RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SD1980TLR | 制造商:Rohm 功能描述:NPN_[g 100V 2A 1000`10000 DPak, SC63,TO252 Cut Tape |
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