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參數(shù)資料
| 型號(hào)： | 2SD1996T |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-1-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 242K |
| 代理商： | 2SD1996T |
Transistors
1
Publication date: April 2003
SJC00239BED
2SD1996
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Low ON resistance R
on
High forward current transfer ratio h
FE
Allowing supply with radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
25
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
12
V
Collector current
IC
0.5
A
Peak collector current
ICP
1A
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 025
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 020
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 012
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
0.1
A
Forward current transfer ratio *
1
hFE1 *
2
VCE = 2 V, IC = 500 mA
200
800
hFE2
VCE = 2 V, IC = 1 A
60
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 500 mA, IB = 20 mA
0.13
0.40
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 500 mA, IB = 50 mA
1.2
V
Transition frequency
fT
VCB
= 10 V, I
E
= 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
(Common base, input open circuited)
ON resistanse *
3
Ron
1.0
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
6.9±0.1
2.5±0.1
0.45
1.05±0.05
2.5±0.5
123
2.5±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(1.0)
(0.85)
3.5
±
0.1
14.5
±
0.5
(0.7)
(4.0)
0.65 max.
1: Emitter
2: Collector
3: Base
MT-1-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*3: Ron Measurement circuit
*2: Rank classification
Rank
R
S
T
hFE1
200 to 350
300 to 500
400 to 800
VV
1 k
Ron
=
VB
× 1000 ()
VA
V
B
f
= 1 kHz
V
= 0.3 V
VB
IB
= 1 mA
VA
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SD2000P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR |
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