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參數(shù)資料
| 型號： | 2SD1992A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type |
| 中文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-1-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SD1992A |
Transistors
2SD1992A
Silicon NPN epitaxial planer type
1
For general amplification
Complementary to 2SB1321A
I
Features
Low collector to emitter saturation voltage
V
CE(sat)
Allowing supply with the radial taping
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
60
V
Collector to emitter voltage
50
V
Emitter to base voltage
V
EBO
I
CP
I
C
7
V
Peak collector current
1
A
Collector current
500
mA
Collector power dissipation
P
C
T
j
T
stg
600
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CE
=
10 V, I
C
=
10 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0
, f
=
1 MHz
0.1
μ
A
μ
A
I
CEO
V
CBO
V
CEO
1
Collector to base voltage
60
V
Collector to emitter voltage
50
V
Emitter to base voltage
V
EBO
h
FE1
*2
h
FE2
*1
7
V
Forward current transfer ratio
85
340
40
90
Collector to emitter saturation voltage
*1
V
CE(sat)
f
T
C
ob
0.35
0.6
V
Transition frequency
200
MHz
Collector output capacitance
6
15
pF
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
6.9
±
0.1
1.05
±
0.05
2.5
±
0.1
3
±
0
1
±
0
(1.45)
0.8
0.7
4.0
0
0
0
1
0.65 max.
0.45
+
0.1
0.05
0
+
0
0
2.5
±
0.5
2.5
±
0.5
2
±
0
1
2
3
1.2
±
0.1
0.65
0.45
0.1
+
(HW Type)
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
Rank
Q
R
S
No-rank
h
FE1
85 to 170
120 to 240
170 to 340
85 to 340
Note)*1: Pulse measurement
*2: Rank classification
Product of no-rank is not classified and have no indication for rank.
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PDF描述 |
|---|---|
| 2SD1993 | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
| 2SD1994A | Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) |
| 2SD1995 | Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 2SD1996 | Silicon NPN epitaxial planer type(For low-voltage output amplification) |
| 2SD2000 | Silicon NPN triple diffusion planar type(For power switching) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1992A0A | 功能描述:TRANS NPN LF AMP 50VCEO MT-1 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1992AR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1992A-R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1994A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1994ARA | 功能描述:TRANS NPN LF AMP 50VCEO MT-2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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