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參數資料
| 型號： | 2SD2162-K |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, ISOLATED TO-220, FULL PACK-3 |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 228K |
| 代理商： | 2SD2162-K |
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
Document No. D14865EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2162
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2162 is a Darlington power transistor that can directly drive
from the IC output.
This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
In
addition,
a
small
resin-molded
insulation
type
package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
High hFE due to Darlington connection
hFE
≥ 2,000 (VCE = 2.0 V, IC = 3.0 A)
Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
+8.0,
5.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms,
duty cycle
≤ 50%
+12,
8.0
A
Base current (DC)
IB(DC)
0.8
A
TC = 25
°C
25
W
Total power dissipation
PT
TA = 25
°C
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
ORDERING INFORMATION
Ordering Name
Package
2SD2162
Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD2163-J | 10 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2166/Q | 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126FP |
| 2SD2166C6/QR | 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126FP |
| 2SD2166C6/R | 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126FP |
| 2SD2170T100 | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2162M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 8A I(C) | TO-220VAR |
| 2SD2163 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING |
| 2SD2163-AZ-J | 制造商:Renesas Electronics Corporation 功能描述:Trans Darlington NPN 100V 10A 3-Pin(3+Tab) TO-220 Isolated |
| 2SD2163J | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
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