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參數(shù)資料
| 型號(hào)： | 2SD2170T100 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MPT3, SC-62, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 160K |
| 代理商： | 2SD2170T100 |
1/2
www.rohm.com
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.02 - Rev.B
Medium Power Transistor
(Motor, Relay drive) (90 , 2A)
2SD2170
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to "L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
Dimensions (Unit : mm)
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
90
+20
10
6
2
3
2
0.5 1
2
150
55 to +150
Unit
V
A (DC)
A (Pulse)
W
°C
1 Single pulse Pw=10ms,Duty=1/2
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Packaging specifications and hFE
Equivalent circuit
Type
2SD2170
MPT3
1k to 10k
T100
1000
DM
Package
hFE
Code
Basic ordering unit (pieces)
Marking
R2
R1
E
B
C
B
E
: Emitter
: Base
: Collector
R1
3.5k
R2
300
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
ICBO
IEBO
hFE
fT
Cob
80
-
1000
-
80
25
110
10
3
10000
-
V
A
mA
-
*1
*2
*1
MHz
pF
IC = 50
A
IC = 1mA
VCB = 70V
VEB = 5V
VCE(sat)
-
1.5
V
IC/IB = 1A/1mA
VCE = 2V , IC = 1A
VCE = 5V , IE =
0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
*1 Measured using pulse current.
*2 Transition frequency of the device.
+20
10
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