- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33435 > 2SD2163-J 10 A, 100 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD2163-J |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 214K |
| 代理商： | 2SD2163-J |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
Document No. D16139EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD2163
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND
LOW-SPEED HIGH-CURRENT SWITCHING
DATA SHEET
2002
The 2SD2163 is a mold power transistor developed for low-
speed high-current switching.
This transistor is ideal for direct
driving from the IC output of devices such as pulse motor drivers
and relay drivers of PC terminals.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
High DC current gain due to Darlington connection
hFE = 1,000 MIN. (@IC = 10 A)
Low collector saturation voltage:
VCE(sat) = 1.5 V MAX. (@IC = 10 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
±10
A
Collector current (pulse)
IC(pulse)*
±20
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT (Tc = 25
°C)
30
W
Total power dissipation
PT (Ta = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
10
A
DC current gain
hFE**
VCE = 2.0 V, IC = 10 A
1,000
6,000
30,000
Collector saturation voltage
VCE(sat)**
IC = 10 A, IB = 25 mA
1.1
1.5
V
Base saturation voltage
VBE(sat)**
IC = 10 A, IB = 25 mA
1.8
2.0
V
Turn-on time
ton
1.0
s
Storage time
tstg
5.0
s
Fall time
tf
IC = 10 A, IB1 =
IB2 = 25 mA
RL = 5.0
, VCC 50 V
Refer to the test circuit.
2.0
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
J
hFE
1,000 to 3,000
2,000 to 5,000
4,000 to 10,000
8,000 to 30,000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2166/Q | 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126FP |
| 2SD2166C6/QR | 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126FP |
| 2SD2166C6/R | 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126FP |
| 2SD2170T100 | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2176-TD | 1.2 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-243 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2163K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2164 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD2164-AZ-L | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。