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參數(shù)資料
| 型號(hào)： | 2SD2170T100 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MPT3, SC-62, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 160K |
| 代理商： | 2SD2170T100 |
2SD2170
Data Sheet
2/2
www.rohm.com
○
c
2009 ROHM Co., Ltd. All rights reserved.
2009.02 - Rev.B
Electrical characteristic curves
2.0
COLLECTOR
CURRENT
:
I
C
(
A)
5
23
4
1
0
1.2
1.6
0.4
0.8
0
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.1 Grounded emitter output
characteristics
Ta=25
°C
1.0mA
0.9mA
0.6mA
0.4mA
IB=0.3mA
0.8mA
0.7mA
0.5mA
COLLECTOR
CURRENT
:
I
C
(
A)
3
1.5
1
2
2.5
0.5
0
0.001
0.002
0.005
0.01
0.02
0.05
0.1
1
2
5
0.2
0.5
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.2 Grounded emitter propagation
characteristics
Ta=25
°C
VCE=2V
DC
CURRENT
GAIN
:
h
FE
5
12
0.02 0.05 0.1
0.2 0.5
0.01
0.005
50
100
200
500
1000
2000
5000
10000
20
COLLECTOR CURRENT : IC
(A)
Fig.3 DC current gain vs. collector current
Ta=25
°C
VCE=4V
2V
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(
V)
5
12
0.05
0.1
0.2
0.5
0.02
0.01
0.2
0.5
1
2
5
0.1
COLLECTOR CURRENT : IC
(A)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Ta=25
°C
IC/IB=1000
500
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF
)
50
10
20
0.5
1
2
5
0.1
10
20
50
100
200
5
COLLECTOR TO BASE VOLTAGE : VCB
(V)
Fig.5 Collector output capacitance
vs. collector-base voltage
Ta=25
°C
f=1MHz
IE=0A
Fig.6 Safe operating area
IC
(A)
1000
10
100
1
0.1
0.01
0.1
1
10
0.001
VCE
(V)
Ta=25
°C
Single
Nonrepetitive
Pulse
1m
s
DC
10ms
P
w
=1
00
m
s
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