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參數(shù)資料
| 型號(hào)： | 2SD2176 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.2 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-243 |
| 封裝： | PCP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 78K |
| 代理商： | 2SD2176 |
2SD2176
No.3196-1/4
Features
Darlington connection.
On-chip Zener diode of 60
±10V between collector and base.
High inductive load handling capability.
Small-sized package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
On-chip Zener diode (60±10V)
50
V
Collector-to-Emitter Voltage
VCEO
On-chip Zener diode (60±10V)
50
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
1.2
A
Collector Current (Pulse)
ICP
2.5
A
Base Current
IB
0.2
A
Collector Dissipation
PC
Mounted on a ceramic board (250mm2
0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=40V, IE=0A
10
μA
Emitter Cutoff Current
IEBO
VEB=5V, IC=0A
2
mA
DC Current Gain
hFE
VCE=3V, IC=500mA
1000
20000
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=1mA
1.0
1.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=1mA
1.5
2
V
Marking : DQ
Continued on next page.
www.semiconductor-sanyo.com/network
Ordering number : EN3196A
33110HA TK IM / 31099TH (KT)/7149MO, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
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SANYO Semiconductors
DATA SHEET
2SD2176
NPN Epitaxial Planar Silicon Transistor
Motor Driver Applications
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| 2SD2176-TD-E | 制造商:SANYO 功能描述:NPN 50V 1.2A 1000 PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL NPN 50V 50A SOT89 制造商:Sanyo 功能描述:0 |
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| 2SD217700A | 功能描述:TRANS NPN LF AMP 50VCE0 MT-2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD21770SA | 功能描述:TRANS NPN LF AMP 50VCEO MT-2 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2177A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency output amplification) |
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