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參數(shù)資料
| 型號： | 2SD2210 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-voltage output amplification) |
| 中文描述： | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SD2210 |
1
Transistor
2SD2210
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Low ON resistance R
on
.
G
High foward current transfer ratio h
FE
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
–
4
+
–
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
25
20
12
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 50mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f= 1MHz
min
25
20
12
200
60
typ
0.13
200
10
1.0
max
1
800
0.4
1.2
Unit
μ
A
V
V
V
V
V
MHz
pF
Marking symbol :
IK
*1
h
FE1
Rank classification
Rank
R
S
T
h
FE1
200 ~ 350
300 ~ 500
400 ~ 800
Marking Symbol
IKR
IKS
IKT
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*2
Pulse measurement
*3
R
on
Measurement circuit
V
B
I
B
=1mA
R
on
= V
1000(
)
A
–V
B
f=1kHz
V=0.3V
V
A
V
V
V
B
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| 2SD2210R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | SC-62 |
| 2SD2210S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | SC-62 |
| 2SD2210T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | SC-62 |
| 2SD2211 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power Transistor (160V , 1.5A) |
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