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參數(shù)資料
| 型號： | 2SD2220 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type Darlington(For low-frequency amplification) |
| 中文描述： | 1 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-3-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 39K |
| 代理商： | 2SD2220 |
1
Power Transistors
2SD2220
Silicon NPN triple diffusion planar type Darlington
For low-frequency amplification
I
Features
G
Suitable for the driver circuit of a motor, a printer hammer and
like that, since this transistor is designed for the high forward
current transfer ratio h
FE
G
A shunt resistor is omitted from the driver
G
Allowing supply with the radial taping
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25
°
C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
100
80
5
1.5
1
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 1mA
I
C
= 1A, I
B
= 1mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
min
100
80
5
4000
typ
150
max
100
100
20000
1.8
2.2
Unit
nA
nA
V
V
V
V
V
MHz
*
h
FE
Rank classification
Rank
Q
R
h
FE
4000 to 10000 8000 to 20000
Unit: mm
Internal Connection
1:Emitter
2:Collector
3:Base
MT3 Type Package
7.5
±
0.2
4.5
±
0.2
90
°
0.8C
0.8C
0.4
±
0.1
0.8C
1
2
3
0.5
±
0.1
0.7
±
0.1
1.0
±
0.1
0.85
±
0.1
0.65
±
0.1
0.7
±
0.1
2
±
0
1
±
0
1
±
1
3
±
0
2.5
±
0.2
2.5
±
0.2
2.05
±
0.2
B
E
C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SD22200RA | 功能描述:TRANS NPN 80VCEO 1A MT-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2220Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | TO-126VAR |
| 2SD2220R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | TO-126VAR |
| 2SD2221 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SD2222 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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