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參數(shù)資料
| 型號： | 2SD2351T106/V |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UMT3, SC-70, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 2SD2351T106/V |
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
Rev.A
2/3
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
60
50
12
250
3.5
0.3
V
A
V
MHz
pF
IC
=10A
IC
=1mA
IE
=10A
VCB
=50V
VEB
=12V
IC/IB
=50mA/5mA
VCE/IC
=5V/1mA
hFE
820
2700
VCE
=5V, IE=10mA, f=100MHz
VCB
=5V, IE=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
Emitter cutoff current
Collector cutoff current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current transfer ratio
Measured using pulse current.
Electrical characteristics curves
0
0.2
0.1
0.3
0.4
0.8
1.2
1.6
2.0
0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics (
Ι )
COLLECTOR
CURRENT
:
I
C
(mA)
Ta=25
°C
2.0
A
1.2
A
1.0
A
0.8
A
0.6
A
0.4
A
0.2
A
IB=0
1.8
A
1.6
A
1.4
A
0
8
412
16
40
80
120
160
200
020
0
0.4
0.2
0.5
0.6
0.8
1.0
1
2
5
20
10
50
100
200
1.4
1.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
COLLECTOR
CURRENT
:
I
C
(mA)
VCE=5V
°C
25
°C
25
°C
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (
ΙΙ )
COLLECTOR
CURRENT
:
I
C
(mA)
500
A
450
A
400
A
350
A
250
A
200
A
150A
100
A
50
A
IB=0
Ta=25
°C
Measured
using pulse current
300
A
0.2
1
2
5
0.5
10 20
50 100
10000
10
20
50
100
200
500
1000
2000
5000
200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current (
Ι )
DC
CURRENT
GAIN
:
h
FE
Ta=25
°C
Measured
using pulse current
VCE=10V
5V
3V
0.2
1
2
5
0.5
10 20
50 100
10000
10
20
50
100
200
500
1000
2000
5000
200
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (
ΙΙ )
DC
CURRENT
GAIN
:
h
FE
VCE=5V
Measured
using pulse current
Ta=100
°C
25
°C
25°C
12
5
0.5
10 20
50 100
1000
1
2
5
10
20
50
100
200
500
0.2
200
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current (
Ι )
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
Ta=25
°C
IC / IB=50
20
10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2351T106W | 功能描述:兩極晶體管 - BJT NPN 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2353(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS |
| 2SD235800A | 功能描述:TRANS NPN 10VCEO 1A MT-2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD235G | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 50V 3A 1.5W BCE |
| 2SD2374 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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