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參數(shù)資料
| 型號： | 2SD362 |
| 英文描述： | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 8A I(C) | TO-66 |
| 中文描述： | 晶體管|晶體管|叩| 100V的五（巴西）總裁| 8A條一（c）|至66 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SD362 |
2SC458 (LG), 2SC2310
4
0
50
100
150
Ambient Temperature Ta (
°C)
Collector
Power
Dissipation
P
C
(mW)
Maximum Collector Dissipation Curve
300
200
100
Collector to Emitter Voltage VCE (V)
0
Collector
Current
I
C
(mA)
Typical Output Characteristics
10
8
6
4
2
25
20
15
10
5
IB = 0
10
A
20
30
40
50
60
P
C =
200mW
Typical Transfer Characteristics
Collector
Current
I
C
(mA)
1
0
2
3
4
5
Base to Emitter Voltage VBE (V)
1.0
0.8
0.6
0.4
0.2
VCE = 12 V
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
0.03
0.1
30
0.3
3
1.0
10
0
100
200
300
DC
Current
Transfer
Ratio
h
FE
VCE = 12 V
25
Ta =
75°
C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD363 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistor |
| 2SD365 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220 |
| 2SD366 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220 |
| 2SD371 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SD377 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 450V 10A 100W BEC |
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