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參數(shù)資料
| 型號： | 2SD620 |
| 廠商： | Panasonic Corporation |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SD620 |
1
Silicon MOS FETs (Small Signal)
2SK620
Silicon N-Channel MOS FET
unit: mm
For switching
I
Features
G
High-speed switching
G
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
t
on*
t
off*
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100
μ
A, V
GS
= 0
I
D
= 100
μ
A, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200
*
t
on
, t
off
measurement circuit
min
50
1.5
20
typ
30
10
20
Unit
μ
A
nA
V
V
mS
pF
pF
pF
ns
ns
max
10
50
3.5
50
15
5
1
1: Gate
2: Source
3: Drain
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15
0.65±0.15
3
1
2
0
0
1
0
+
–
1
+
–
0
0.4±0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
V
out
V
DD
= 5V
V
GS
= 5V
50
200
1
μ
F
V
in
V
out
90%
10%
10%
90%
t
on
t
off
Marking Symbol: 3N
Internal Connection
G
D
S
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK620 | Silicon N-Channel MOS FET |
| 2SD621 | For H-Deflection Output with High Voltage |
| 2SD627 | 2SD627 |
| 2SD637 | Silicon NPN epitaxial planer type |
| 2SD638 | Silicon NPN epitaxial planer type(For medium-power general amplification) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD621 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:For H-Deflection Output with High Voltage |
| 2SD627 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:2SD627 |
| 2SD628 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Darlington Power Transistor |
| 2SD633 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) |
| 2SD634 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(7A,40W) |
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