參數(shù)資料
型號: 2SJ168
元件分類: 小信號晶體管
英文描述: 200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SMINI, 2-3F1F, SC-59, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 316K
代理商: 2SJ168
2SJ168
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ168
High Speed Switching Applications
Analog Switch Applications
Interface Applications
Excellent switching time: ton = 14 ns (typ.)
High forward transfer admittance: |Yfs| = 100 mS (min)
@ID = 50 mA
Low on resistance: RDS (ON) = 1.3 (typ.) @ ID = 50 mA
Enhancement-mode
Complementary to 2SK1062
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
DC
ID
200
Drain current
Pulse
IDP
800
mA
Drain power dissipation (Ta
= 25°C)
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
Marking
Unit: mm
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
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