參數(shù)資料
型號(hào)： 2SJ168
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SMINI, 2-3F1F, SC-59, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 316K
代理商： 2SJ168
2SJ168
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0
±100
nA
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0
10
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 1 mA, VGS = 0
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2
3.5
V
Forward transfer admittance
Yfs
VDS = 10 V, ID = 50 mA
100
mS
Drain-source ON resistance
RDS (ON)
ID = 50 mA, VGS = 10 V
1.3
2.0
Ω
Drain-source ON voltage
VDS (ON)
ID = 50 mA, VGS = 10 V
65
100
mV
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
73
85
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
15
22
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
48
60
pF
Rise time
tr
8
Turn-on time
ton
14
Fall time
tf
35
Switching time
Turn-off Time
toff
VIN: tr, tf < 5 ns
D.U. <= 1% (Zout = 50 Ω)
100
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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