參數(shù)資料
型號: 2SJ169
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管| MOSFET的| P通道| 60V的五(巴西)直| 12A條(?。﹟ TO - 220AB現(xiàn)有
文件頁數(shù): 3/8頁
文件大?。?/td> 38K
代理商: 2SJ169
2SJ160, 2SJ161, 2SJ162
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SJ160
V
(BR)DSX
–120
V
I
D = –10 mA , VGS = 10 V
breakdown voltage
2SJ161
–140
V
2SJ162
–160
V
Gate to source breakdown
voltage
V
(BR)GSS
±15
V
I
G = ±100 A, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–0.15
–1.45
V
I
D = –100 mA, VDS = –10 V
Drain to source saturation
voltage
V
DS(sat)
–12
V
I
D = –7 A, VGD = 0*
1
Forward transfer admittance
|y
fs|
0.7
1.0
1.4
S
I
D = –3 A, VDS = –10 V*
1
Input capacitance
Ciss
900
pF
V
GS = 5 V, VDS = –10V,
Output capacitance
Coss
400
pF
f = 1 MHz
Reverse transfer capacitance
Crss
40
pF
Turn-on time
t
on
230
ns
V
DD = –20 V, ID = –4 A
Turn-off time
t
off
110
ns
Note:
1. Pulse test
相關PDF資料
PDF描述
2SJ170 TRANSISTOR | MOSFET | P-CHANNEL | 80V V(BR)DSS | 12A I(D) | TO-220AB
2SJ182(L) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ182(S) TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252VAR
2SJ182L Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ188FA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR
相關代理商/技術參數(shù)
參數(shù)描述
2SJ170 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 80V V(BR)DSS | 12A I(D) | TO-220AB
2SJ171 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 9.7A I(D) | TO-220AB
2SJ172 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SJ173 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
2SJ174 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING