參數(shù)資料
型號(hào): 2SJ169
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管| MOSFET的| P通道| 60V的五(巴西)直| 12A條(?。﹟ TO - 220AB現(xiàn)有
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 38K
代理商: 2SJ169
2SJ160, 2SJ161, 2SJ162
4
150
100
50
0
50
100
150
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
–20
–5
–1.0
–0.2
–20
–100
–500
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–10
–0.5
–5
–10
–50
–200
Ta = 25°C
DC
Operation
(T
C = 25°C)
PW
=
100
ms
(1
Shot)
PW
=
10
ms
(1
Shot)
ID max (Continuous)
(–14.3 V,
–7 A)
(–140 V, –0.71 A)
(–160 V, –0.63 A)
2SJ160
2SJ161
2SJ162
(–120 V, –0.83 A)
–2
–10
–20
–50
Drain to Source Voltage VDS (V)
Typical Output Characteristics
–8
–2
–10
–30
–40
TC = 25°C
0
–4
–6
–2
V
GS = 0
Drain
Current
I
D
(A)
–1 V
–3
–4
–5
–6
–7
–8
–9
Pch
= 100
W
–1.0
–0.8
–2.0
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–0.8
–0.2
–0.4
–1.2
–1.6
0
–0.4
–0.6
VDS = –10 V
75
T C
=
–25°C 25
相關(guān)PDF資料
PDF描述
2SJ170 TRANSISTOR | MOSFET | P-CHANNEL | 80V V(BR)DSS | 12A I(D) | TO-220AB
2SJ182(L) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ182(S) TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252VAR
2SJ182L Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ188FA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ170 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 80V V(BR)DSS | 12A I(D) | TO-220AB
2SJ171 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 9.7A I(D) | TO-220AB
2SJ172 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SJ173 制造商:NJSEMI 制造商全稱(chēng):New Jersey Semi-Conductor Products, Inc. 功能描述:SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
2SJ174 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING