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參數(shù)資料
| 型號(hào)： | 2SJ181STL-E |
| 元件分類： | JFETs |
| 英文描述： | 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | 2SJ181STL-E |
2SJ181(L), 2SJ181(S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–10
–20
–30
–40
–50
–0.5
0
–0.1
–0.2
–0.3
–0.4
0
–2–4–6–8
–10
Tc = –25°C
25°C
75°C
40
0
10
20
30
0
50
100
150
200
VDS = –20 V
Pulse Test
–10 V
–4.5 V
–5 V
VGS = –4 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–3
–1
–0.3
–0.1
–0.01
–0.03
–10
–20
–50 –100 –200
–500 –1000
–10
Ta = 25°C
10
s
PW
= 10
ms
(1
shot)
DC
Oper
ation
(Tc
= 25°C)
1 ms
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–20
0
–4
–8
–12
–16
0
–4
–8
–12
–16
–20
Pulse Test
ID = –0.5 A
–0.1 A
–0.2 A
Drain Current
ID (A)
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
100
50
10
20
5
–0.1
–0.5
–1
–0.02
–0.2
–2
–0.05
500
200
VGS = –10 V
–15 V
Pulse Test
–6 V
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PDF描述 |
|---|---|
| 2SJ181S | 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ181STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ182 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ182(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-251VAR |
| 2SJ182(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252VAR |
| 2SJ182L | 制造商:Renesas Electronics Corporation 功能描述:3A, 60V, DPAK - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET P D-PAK 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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