參數(shù)資料
型號: 2SJ181STL-E
元件分類: JFETs
英文描述: 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SC-63, DPAK-3
文件頁數(shù): 8/10頁
文件大小: 100K
代理商: 2SJ181STL-E
2SJ181(L), 2SJ181(S)
Rev.2.00 Sep 07, 2005 page 5 of 7
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
Source to Drain Voltage
VSD
(V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
–0.2
–0.4
–0.6
–0.8
–1.0
Pulse Test
VGS = 10 V
0, 5 V
tr
td(on)
Vin
90%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit
Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γs
(t)
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) θch – c
θch – c = 6.25°C/W, Tc = 25°C
Vin Monitor
D.U.T.
Vin
–10 V
RL
Vout
Monitor
50
VDD
= –30 V
相關PDF資料
PDF描述
2SJ181S 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ185 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ187(JA) 1000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ189TP 4 A, 30 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ191TP 2 A, 60 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
2SJ181STR-E 制造商:Renesas Electronics Corporation 功能描述:
2SJ182 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET
2SJ182(L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-251VAR
2SJ182(S) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252VAR
2SJ182L 制造商:Renesas Electronics Corporation 功能描述:3A, 60V, DPAK - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET P D-PAK 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR